tpsmb6.8 thru tpsmb43a vishay semiconductors formerly general semiconductor document number 88406 www.vishay.com 06-may-02 1 surface mount automotive transient voltage suppressors breakdown voltage 6.8 to 43v peak pulse power 600w maximum ratings and thermal characteristics (t a = 25? unless otherwise noted) parameter symbol value unit peak pulse power dissipation with a 10/1000 s waveform (1)(2) (fig. 1) p ppm minimum 600 w peak pulse current with a 10/1000 s waveform (1) (fig. 3) i ppm see next table a peak forward surge current 8.3ms single half sine-wave (2)(3) i fsm 75 a instantaneous forward voltage at 50a (3) v f 3.5 v operating junction and storage temperature range t j , t stg 65 to +185 ? notes: (1) non-repetitive current pulse, per fig.3 and derated above t a = 25? per fig. 2 (2) mounted on 0.2 x 0.2 (5.0 x 5.0mm) land areas per figure (3) mounted on 8.3ms single half sine-wave duty cycle = 4 pulses per minute maximum available in uni-directional only do-214aa (smb) dimensions in inches and (millimeters) 0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) 0.008 (0.203) max. 0.220 (5.59) 0.205 (5.21) 0.060 (1.52) 0.030 (0.76) 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.096 (2.44) 0.084 (2.13) cathode band patented* mechanical data case: jedec do-214aa molded plastic body over passivated junction terminals: solder plated, solderable per mil-std-750, method 2026 polarity: the color band denotes the cathode, which is positive with respect to the anode under normal tvs operation mounting position: any weight: 0.003 oz., 0.093 g packaging codes/options: 5/3.2k per 13" reel (12mm tape), 38.4k/box 2/750 ea per 7" reel (12mm tape), 15k/box features plastic package has underwriters laboratory flammability classification 94v-0 easy pick and place low profile package built-in strain relief ideal for automated placement exclusive patented par oxide passivated chip construction 600w peak pulse power capability with a 10/1000ms waveform, repetition rate (duty cycle): 0.01% excellent clamping capability low incremental surge resistance very fast response time for devices with v (br) 10v i d is typically less than 2.0ma at t a = 150 c designed for under the hood surface mount applications high temperature soldering: 250 c/10 seconds at terminals 0.106 max (2.69 max) 0.050 min (1.27 min) 0.220 ref 0.083 min (2.10 min) mounting pad layout *patent # s 4,980,315 5,166,769 5,278,094
tpsmb6.8 thru tpsmb43a vishay semiconductors formerly general semiconductor www.vishay.com document number 88406 2 06-may-02 electrical characteristics (t a = 25 c unless otherwise noted) t j = 150? maximum breakdown voltage maximum maximum peak pulse maximum v (br) (1) at i t reverse reverse surge clamping device (v) test stand-off leakage leakage current voltage marking current voltage at v wm at v wm i ppm (2) at i ppm device code min. max. i t (ma) v wm (v) i d ( a) i d ( a) (a) vc (v) tpsmb6.8 kdp 6.12 7.48 10 5.50 500 1000 55.6 10.8 tpsmb6.8a kep 6.45 7.14 10 5.80 500 1000 57.1 10.5 tpsmb7.5 kfp 6.75 8.25 10 6.05 250 500 51.3 11.7 tpsmb7.5a kgp 7.13 7.88 10 6.40 250 500 53.1 11.3 tpsmb8.2 khp 7.38 9.02 10 6.63 100 200 48.0 12.5 tpsmb8.2a kkp 7.79 8.61 10 7.02 100 200 49.6 12.1 tpsmb9.1 klp 8.19 10.0 1.0 7.37 25 50 43.5 13.8 tpsmb9.1a kmp 8.65 9.55 1.0 7.78 25 50 44.8 13.4 tpsmb10 knp 9.00 11.0 1.0 8.10 5.0 20 40.0 15.0 tpsmb10a kpp 9.50 10.5 1.0 8.55 5.0 20 41.4 14.5 tpsmb11 kqp 9.90 12.1 1.0 8.92 2.0 5.0 37.0 16.2 tpsmb11a krp 10.5 11.6 1.0 9.40 2.0 5.0 38.5 15.6 tpsmb12 ksp 10.8 13.2 1.0 9.72 2.0 5.0 34.7 17.3 tpsmb12a ktp 11.4 12.6 1.0 10.2 2.0 5.0 35.9 16.7 tpsmb13 kup 11.7 14.3 1.0 10.5 2.0 5.0 31.6 19.0 tpsmb13a kvp 12.4 13.7 1.0 11.1 2.0 5.0 33.0 18.2 tpsmb15 kwp 13.5 16.5 1.0 12.1 1.0 5.0 27.3 22.0 tpsmb15a kxp 14.3 15.8 1.0 12.8 1.0 5.0 28.3 21.2 tpsmb16 kyp 14.4 17.6 1.0 12.9 1.0 5.0 25.5 23.5 tpsmb16a kzp 15.2 16.8 1.0 13.6 1.0 5.0 26.7 22.5 tpsmb18 ldp 16.2 19.8 1.0 14.5 1.0 5.0 22.6 26.5 tpsmb18a lep 17.1 18.9 1.0 15.3 1.0 5.0 23.8 25.2 tpsmb20 lfp 18.0 22.0 1.0 16.2 1.0 5.0 20.6 29.1 tpsmb20a lgp 19.0 21.0 1.0 17.1 1.0 5.0 21.7 27.7 tpsmb22 lhp 19.8 24.2 1.0 17.8 1.0 5.0 18.8 31.9 tpsmb22a lkp 20.9 23.1 1.0 18.8 1.0 5.0 19.6 30.6 tpsmb24 llp 21.6 26.4 1.0 19.4 1.0 5.0 17.3 34.7 tpsmb24a lmp 22.8 25.2 1.0 20.5 1.0 5.0 18.1 33.2 tpsmb27 lnp 24.3 29.7 1.0 21.8 1.0 5.0 15.3 39.1 tpsmb27a lpp 25.7 28.4 1.0 23.1 1.0 5.0 16.0 37.5 tpsmb30 lqp 27.0 33.0 1.0 24.3 1.0 5.0 13.8 43.5 tpsmb30a lrp 28.5 31.5 1.0 25.6 1.0 5.0 14.5 41.4 tpsmb33 lsp 29.7 36.3 1.0 26.8 1.0 5.0 12.6 47.7 tpsmb33a ltp 31.4 34.7 1.0 28.2 1.0 5.0 13.1 45.7 tpsmb36 lup 32.4 39.6 1.0 29.1 1.0 5.0 11.5 52.0 tpsmb36a lvp 34.2 37.8 1.0 30.8 1.0 5.0 12.0 49.9 tpsmb39 lwp 35.1 42.9 1.0 31.6 1.0 5.0 10.6 56.4 tpsmb39a lxp 37.1 41.0 1.0 33.3 1.0 5.0 11.1 53.9 tpsmb43 lyp 38.7 47.3 1.0 34.8 1.0 5.0 9.7 61.9 tpsmb43a lzp 40.9 45.2 1.0 36.8 1.0 5.0 10.1 59.3 notes: (1) v (br) measured after i t applied for 300 s, i t =square wave pulse or equivalent (2) surge current waveform per fig. 3 and derate per fig. 2 (3) all terms and symbols are consistent with ansi/ieee c62.35
tpsmb6.8 thru tpsmb43a vishay semiconductors formerly general semiconductor document number 88406 www.vishay.com 06-may-02 3 ratings and characteristic curves (t a = 25 c unless otherwise noted) fig.1 peak pulse power rating curve 0.1 1.0 10 100 0.1 s 1.0 s10 s 100 s 1.0ms 10ms p ppm, peak power (kw) c j , junction capacitance, pf v (br) , breakdown voltage (v) 10 100 1,000 10,000 1 10 100 200 td, pulse width, sec. fig. 4 typical junction capacitance fig. 2 pulse derating curve 0 25 50 75 100 0 50 100 150 200 peak pulse power (p pp ) or current (i pp ) derating in percentage (%) t a , ambient temperature ( c) t j = 25 c f = 1 mhz vsig = 50mvp-p v r measured at zero bias v r measured at stand-off voltage, v wm t a = 25 c non-repetitive pulse waveform shown in fig. 3 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas fig. 5 maximum non-repetitive peak forward surge current 100 number of cycles at 60 hz i fsm, peak forward surge current (a) 10 1 10 100 t j = t j max 8.3ms single half sine-wave (jedec method) 0 50 100 150 i ppm peak pulse current, % i rsm fig. 3 pulse waveform t j = 25 c pulse width (td) is defined as the point where the peak current decays to 50% of i ppm tr = 10 sec. peak value i ppm half value ipp i ppm 2 td 10/1000 sec. waveform as defined by r.e.a. 0 1.0 2.0 3.0 4.0 t time (ms)
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